Texas Instruments CSD19505KTTT NexFET N-Channel MOSFET, 80 V Vdss, 200 A continuous drain, 3.1 mOhm Rds(on) at 10 V, DDPAK/TO-263-3 surface-mount package, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 80 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 200A (Ta) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
| Vgs(th) (Max) @ id | 3.2V @ 250µA |
| Rds on (Max) @ id, vgs | 3.1mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 76 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7920 pF @ 40 V |
Surface-mount DDPAK/TO-263-3 (3 leads plus tab). The tab is the drain terminal and must be soldered to a copper pour for thermal management — the 300 W dissipation rating assumes a low-thermal-resistance PCB layout, not free-air. Standard footprint matches many existing TO-263 power-stage layouts; no pad redesign needed if replacing a similar 80 V class part.
ROHS3 compliant.
Yes — the 200 A continuous drain rating at 25°C case temperature and 3.1 mOhm Rds(on) make it suitable for high-current switching in power distribution, DC-DC converters, and motor drives, provided the PCB thermal design can handle the 300 W dissipation limit.