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Texas Instruments CSD19502Q5B

TI CSD19502Q5B NexFET N-Ch MOSFET, 80V 100A 4.1mΩ

MPNCSD19502Q5B
End of Life

Texas Instruments NexFET™ N-Channel MOSFET, 80 V, 100 A, 4.1 mOhm @ 19 A / 10 V, 62 nC gate charge, 8-VSON-CLIP (5x6) surface-mount package, -55 to 150 °C junction temperature.

$2.65Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesNexFET™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CSD19502Q5B specifications
ParameterValue
SeriesNexFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C100A (Ta)
Power dissipation3.1W (Ta), 195W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.3V @ 250µA
Rds on (Max) @ id, vgs4.1mOhm @ 19A, 10V
Gate charge (Qg) (Max) @ vgs62 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4870 pF @ 40 V

Product details

80 V NexFET™ — low-loss switch for 48 V rails and high-current POL

The Texas Instruments CSD19502Q5B is an 80 V, 100 A N-channel NexFET™ power MOSFET in a VSON-CLIP (5x6) package. It targets high-efficiency DC-DC converters, synchronous rectification stages, and motor-drive half-bridges where conduction loss matters. The 4.1 mΩ typical on-resistance at 10 V gate drive keeps dissipation low at 19 A load current, and the 62 nC gate charge at 10 V lets a standard gate driver switch it fast without excessive drive losses.

Temperature range and package — field fit

Surface-mount reflow is standard; the CLIP construction reduces package resistance and improves current spreading into the die.

Frequently asked questions

What is the lead time for CSD19502Q5B?

Lead time is confirmed at quote time based on current distribution stock. Submit an RFQ for the latest lead time and availability.