CSD19502Q5B

Texas Instruments · NexFET™ Series

Texas Instruments NexFET™ N-Channel MOSFET, 80 V, 100 A, 4.1 mOhm @ 19 A / 10 V, 62 nC gate charge, 8-VSON-CLIP (5x6) surface-mount package, -55 to 150 °C junction temperature.

Texas Instruments CSD19502Q5B
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

CSD19502Q5B specifications
Parameter / AttributeSpecification / Value
SeriesNexFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C100A (Ta)
Power dissipation3.1W (Ta), 195W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id3.3V @ 250µA
Rds on (Max) @ id, vgs4.1mOhm @ 19A, 10V
Gate charge (Qg) (Max) @ vgs62 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4870 pF @ 40 V

Technical details

80 V NexFET™ — low-loss switch for 48 V rails and high-current POL

The Texas Instruments CSD19502Q5B is an 80 V, 100 A N-channel NexFET™ power MOSFET in a VSON-CLIP (5x6) package. It targets high-efficiency DC-DC converters, synchronous rectification stages, and motor-drive half-bridges where conduction loss matters. The 4.1 mΩ typical on-resistance at 10 V gate drive keeps dissipation low at 19 A load current, and the 62 nC gate charge at 10 V lets a standard gate driver switch it fast without excessive drive losses.

Temperature range and package — field fit

Surface-mount reflow is standard; the CLIP construction reduces package resistance and improves current spreading into the die.

CSD19502Q5B
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