The Texas Instruments CSD18543Q3AT is an N-channel NexFET power MOSFET rated for 60 V drain-source and 60 A continuous drain at the case (Tc). The 15.6 mOhm maximum on-resistance is specified at 4.5 V gate drive, which means a 5 V logic rail or a 3.3 V-to-5 V gate driver can fully enhance the channel without a separate 10 V supply. The 14.5 nC total gate charge at 10 V keeps switching losses low in the 100 kHz to 500 kHz range, making this a fit for point-of-load converters, motor pre-drive stages, and battery protection circuits.
Thermal and switching — sizing the copper island
Input capacitance is 1150 pF at 30 V Vds — the driver should be sized to charge and discharge this capacitance at the target switching frequency without excessive cross-conduction.
Active production, ROHS3, and sourcing posture
It is ROHS3 compliant.