Texas Instruments CSD18537NKCS, N-Channel MOSFET, 60 V Vdss, 50 A continuous drain, 14 mOhm Rds(on) at 10 V gate drive, TO-220-3 through-hole package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 50A (Tc) |
| Power dissipation | 94W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 3.5V @ 250µA |
| Rds on (Max) @ id, vgs | 14mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 18 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1480 pF @ 30 V |
It is built on TI's NexFET™ technology, delivering a typical Rds(on) of 14 mOhm at 10 V gate drive (25 A).
Total gate charge is 18 nC at 10 V. Input capacitance is 1480 pF at 30 V drain-source. Maximum threshold voltage is 3.5 V at 250 µA.
It is ROHS3 compliant, with no restricted substances above the threshold.
The maximum Rds(on) is 14 mOhm at 25 A drain current with a 10 V gate-source voltage. This is the spec to use for worst-case conduction-loss calculations in a power stage.
Both are 60 V N-channel MOSFETs in TO-220-3, but the CSD18537NKCS has a lower Rds(on) (14 mOhm vs. typically 17.5 mOhm for IRFZ44N) and a lower gate charge (18 nC vs. roughly 60 nC). Pin-compatible in most layouts, but verify the gate-drive voltage and switching frequency requirements — the lower gate charge allows faster switching. Always check the PCB footprint and thermal pad compatibility.
At 50 A continuous drain current and 94 W maximum power dissipation, a heatsink is required for any sustained high-current operation. The TO-220-3 package relies on the metal tab for heat transfer to a heatsink or PCB copper area. For pulsed or low-duty-cycle loads, the thermal mass of the package may suffice without a heatsink, but always calculate junction temperature rise from the Rds(on) and duty cycle.
No — the maximum threshold voltage is 3.5 V at 250 µA, and the drive voltage range for rated Rds(on) is 6 V to 10 V. A 3.3 V gate signal will not fully enhance the MOSFET, resulting in much higher on-resistance and potential thermal runaway. Use a 5 V or 10 V gate-drive rail for this part.
Yes, it is ROHS3 compliant, meeting the EU RoHS directive for restricted substances.