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Texas Instruments CSD18537NKCS
Texas Instruments

CSD18537NKCS MOSFET, N-Channel 60V 50A TO-220-3

MPNCSD18537NKCS
End of Life

Texas Instruments CSD18537NKCS, N-Channel MOSFET, 60 V Vdss, 50 A continuous drain, 14 mOhm Rds(on) at 10 V gate drive, TO-220-3 through-hole package, -55°C to 150°C junction temperature.

$1.35Ref. price · indicative, final on quote
CSD18537NKCS datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
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Specifications

CSD18537NKCS Technical Specifications
ParameterValue
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation94W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id3.5V @ 250µA
Rds on (Max) @ id, vgs14mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs18 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1480 pF @ 30 V

Product details

60 V, 50 A N-channel MOSFET in TO-220-3

The Texas Instruments CSD18537NKCS is a 60 V, 50 A N-channel power MOSFET in a through-hole TO-220-3 package. It is built on TI's NexFET™ technology, delivering a typical Rds(on) of 14 mOhm at 10 V gate drive (25 A). The device is rated for continuous drain current of 50 A at case temperature 25°C, with a maximum power dissipation of 94 W. It operates over a junction temperature range of -55°C to 150°C, suiting industrial, automotive, and high-ambient power-conversion environments.

Gate drive and switching performance

Total gate charge is 18 nC at 10 V. Input capacitance is 1480 pF at 30 V drain-source. Maximum threshold voltage is 3.5 V at 250 µA.

Lifecycle and compliance

It is ROHS3 compliant, with no restricted substances above the threshold.

Frequently asked questions

What is the Rds(on) of CSD18537NKCS at 10V gate drive?

The maximum Rds(on) is 14 mOhm at 25 A drain current with a 10 V gate-source voltage. This is the spec to use for worst-case conduction-loss calculations in a power stage.

Is CSD18537NKCS a direct replacement for IRFZ44N?

Both are 60 V N-channel MOSFETs in TO-220-3, but the CSD18537NKCS has a lower Rds(on) (14 mOhm vs. typically 17.5 mOhm for IRFZ44N) and a lower gate charge (18 nC vs. roughly 60 nC). Pin-compatible in most layouts, but verify the gate-drive voltage and switching frequency requirements — the lower gate charge allows faster switching. Always check the PCB footprint and thermal pad compatibility.

Does CSD18537NKCS require a heatsink?

At 50 A continuous drain current and 94 W maximum power dissipation, a heatsink is required for any sustained high-current operation. The TO-220-3 package relies on the metal tab for heat transfer to a heatsink or PCB copper area. For pulsed or low-duty-cycle loads, the thermal mass of the package may suffice without a heatsink, but always calculate junction temperature rise from the Rds(on) and duty cycle.

Can CSD18537NKCS be used with 3.3V gate drive?

No — the maximum threshold voltage is 3.5 V at 250 µA, and the drive voltage range for rated Rds(on) is 6 V to 10 V. A 3.3 V gate signal will not fully enhance the MOSFET, resulting in much higher on-resistance and potential thermal runaway. Use a 5 V or 10 V gate-drive rail for this part.

Is CSD18537NKCS RoHS compliant?

Yes, it is ROHS3 compliant, meeting the EU RoHS directive for restricted substances.