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Texas Instruments CSD18534Q5AT

CSD18534Q5AT NexFET N-Channel MOSFET, 60V 50A 9.8mOhm

MPNCSD18534Q5AT
End of Life

Texas Instruments NexFET™ N-Channel MOSFET, 60V Vds, 50A Id, 9.8mOhm Rds(on) @ 14A/10V, 11.1nC Qg @ 4.5V, 8-PowerTDFN (8-VSONP 5x6), -55°C to 150°C Tj, Active.

$1.64Ref. price · indicative, final on quote
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

CSD18534Q5AT Technical Specifications
ParameterValue
SeriesNexFET™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C50A (Ta)
Power dissipation3.1W (Ta), 77W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.3V @ 250µA
Rds on (Max) @ id, vgs9.8mOhm @ 14A, 10V
Gate charge (Qg) (Max) @ vgs11.1 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1770 pF @ 30 V

Product details

60V Vds — 48V rail margin built in

The CSD18534Q5AT: The 60 V ceiling gives 20 % headroom above a 48 V nominal bus — the standard margin for telecom rectifiers, PoE injectors, and 48 V battery-backed supplies. The 8-VSONP (5x6 mm) package keeps the footprint compact for dense board layouts.

9.8 mOhm Rds(on) — thermal budget at 14 A

At that operating point conduction dissipation is under 2 W — the 3.1 W Ta and 77 W Tc power ratings confirm the package can shed heat when the PCB copper island is sized to the 8-VSONP exposed pad. The gate threshold max is 2.3 V at 250 µA, so a 3.3 V logic signal will not fully enhance the channel; use the 4.5 V or 10 V drive levels listed for lowest Rds(on).

11.1 nC gate charge — light driver load

Total gate charge at 4.5 V is 11.1 nC, and input capacitance at 30 V drain bias is 1770 pF. A standard 1 A gate driver can toggle this FET past the Miller plateau in under 20 ns, keeping cross-conduction losses low in hard-switched topologies. The ±20 V gate rating gives headroom for gate-drive overshoot during fast turn-off.

Full temperature coverage

That covers industrial motor drives with 85°C ambient and 40°C self-heating, plus automotive under-hood compartments where soak temperatures hit 125°C. The 150°C max is the junction limit, not the case — keep the case temperature below 125°C in continuous operation to stay inside the SOA.

Active lifecycle — no phase-out risk

Texas Instruments lists the CSD18534Q5AT as Active product status. The part is ROHS3 compliant.

Frequently asked questions

Is CSD18534Q5AT suitable for 48V power supplies?

Yes. The 60 V drain-to-source rating provides 20 % margin above a 48 V nominal rail, which is the standard design practice for telecom and industrial 48 V supplies. The 50 A continuous current rating and 9.8 mOhm Rds(on) at 10 V drive keep conduction losses low at typical load currents.