60 V, 9.8 mOhm — the conduction-loss ceiling
CSD18534Q5A NexFET N-Channel MOSFET, 60 V drain-source, 9.8 mOhm max Rds(on) at 14 A, 10 V gate drive.
Current rating: case vs. ambient
Continuous drain current is listed at 50 A when the case temperature is held at 25°C, but only 13 A at 25°C ambient with no heatsink. The 77 W power dissipation at the case versus 3.1 W at ambient tells the story — this FET delivers its full current rating only when the bottom-side exposed pad is soldered to a thermal plane that pulls heat into the board. For a rework tech: the 8-VSONP (5x6) package has a large thermal pad; the reflow profile needs a bottom-side preheat to avoid cold joints on the pad.
Gate drive and switching
Gate charge is 22 nC at 10 V, input capacitance 1770 pF at 30 V drain-source.
Sourcing and lifecycle
ROHS3 compliant. The 8-VSONP (5x6) package is moisture-sensitive; store reels dry.
