60 V NexFET in a TO-220 — what it is and where it fits
The TI CSD18534KCS is a 60 V N-channel NexFET power MOSFET in a through-hole TO-220-3 package. It is designed for high-efficiency DC-DC conversion, motor drive, and power supply switching applications where low on-resistance and fast switching are required. The 9.5 mOhm Rds(on) at 40 A and 10 V drive keeps conduction losses low in high-current rails, while the 24 nC gate charge at 10 V means the gate driver does not need to supply a large charge per cycle, supporting higher switching frequencies without excessive driver power.
Key ratings — what they mean for the BOM
Gate charge of 24 nC at 10 V is moderate — a typical MCU GPIO or low-current gate driver can handle it without excessive rise/fall times. The input capacitance (Ciss) of 1880 pF at 30 V Vds is a useful figure for estimating switching losses and driver current. The junction temperature range of -55°C to 175°C exceeds standard industrial limits, making this part a candidate for under-hood automotive or high-ambient enclosures where the junction may see sustained heat.
Lifecycle and compliance
No end-of-life notices or last-time-buy windows are in effect.