CSD18534KCS

Texas Instruments · NexFET™ Series

TI NexFET N-Channel MOSFET, 60V Vdss, 100A (Tc) continuous drain, 9.5mOhm Rds(on) @ 40A/10V, 24nC gate charge, TO-220-3, -55 to 175°C junction.

Texas Instruments CSD18534KCS
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Technical specifications

CSD18534KCS specifications
Parameter / AttributeSpecification / Value
SeriesNexFET™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C45A (Ta), 100A (Tc)
Power dissipation107W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id2.3V @ 250µA
Rds on (Max) @ id, vgs9.5mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs24 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1880 pF @ 30 V

Technical details

The TI CSD18534KCS is a 60 V N-channel NexFET power MOSFET in a through-hole TO-220-3 package. It is designed for high-efficiency DC-DC conversion, motor drive, and power supply switching applications where low on-resistance and fast switching are required. The 9.5 mOhm Rds(on) at 40 A and 10 V drive keeps conduction losses low in high-current rails, while the 24 nC gate charge at 10 V means the gate driver does not need to supply a large charge per cycle, supporting higher switching frequencies without excessive driver power.

Gate charge of 24 nC at 10 V is moderate — a typical MCU GPIO or low-current gate driver can handle it without excessive rise/fall times. The input capacitance (Ciss) of 1880 pF at 30 V Vds is a useful figure for estimating switching losses and driver current.

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