What this 60 V NexFET delivers
The Texas Instruments CSD18532Q5B is a 60 V N-channel NexFET power MOSFET rated for 100 A continuous drain current at 25°C case temperature. Its 3.2 mOhm maximum on-resistance at 10 V gate drive keeps conduction losses low in high-current switching stages — buck converters, motor-drive half-bridges, and battery-management disconnect switches. The package with exposed drain pad pulls heat into the PCB copper plane; the 156 W power dissipation at the case is the thermal limit when the pad is properly soldered to a thermal via array. The -55°C to 150°C junction temperature range covers automotive under-hood and industrial high-ambient environments without derating at the hot end.
Gate charge and switching speed
Total gate charge is 58 nC at 10 V. Input capacitance is 5070 pF at 30 V drain bias.
Package and mounting
The 8-PowerTDFN (VSONP 5x6) has a 5 mm × 6 mm footprint with a large exposed drain pad on the bottom. The PCB land pattern should match the pad dimensions in the datasheet layout recommendation.
Lifecycle and sourcing
No end-of-life notice or last-time-buy window is in effect. For dual-sourcing resilience, verify the Rds(on) and gate-charge differences against your loss budget before substituting.