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Texas Instruments CSD18532Q5B

CSD18532Q5B NexFET N-Ch 60V 100A MOSFET, 8-VSONP

MPNCSD18532Q5B
End of Life

Texas Instruments NexFET™ N-Channel MOSFET, 60 V drain-source, 100 A continuous drain, 3.2 mOhm Rds(on) at 10 V, 8-PowerTDFN (VSONP 5x6) package, -55°C to 150°C junction temperature.

$2.6Ref. price · indicative, final on quote
Texas Instruments CSD18532Q5B datasheet (PDF)
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesNexFET™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CSD18532Q5B specifications
ParameterValue
SeriesNexFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C100A (Ta)
Power dissipation3.2W (Ta), 156W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs3.2mOhm @ 25A, 10V
Gate charge (Qg) (Max) @ vgs58 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5070 pF @ 30 V

Product details

What this 60 V NexFET delivers

The package with exposed drain pad pulls heat into the PCB copper plane; the 156 W power dissipation at the case is the thermal limit when the pad is properly soldered to a thermal via array.

Total gate charge is 58 nC at 10 V. Input capacitance is 5070 pF at 30 V drain bias.

The 8-PowerTDFN (VSONP 5x6) has a 5 mm × 6 mm footprint with a large exposed drain pad on the bottom. The PCB land pattern should match the pad dimensions in the datasheet layout recommendation.

For dual-sourcing resilience, verify the Rds(on) and gate-charge differences against your loss budget before substituting.

Frequently asked questions

What is the maximum drain current of CSD18532Q5B?

The continuous drain current at 25°C case temperature is 100 A. This is the package-limited rating when the drain pad is soldered to a sufficient copper area; derate linearly above 25°C per the thermal curve in the datasheet.

What is the Rds(on) of CSD18532Q5B?

Maximum on-resistance is 3.2 mOhm at 25 A drain current and 10 V gate drive. At 4.5 V drive the Rds(on) is higher — the 10 V drive is recommended for full conduction loss performance.

Is CSD18532Q5B a direct replacement for CSD18533Q5B?

The CSD18533Q5B is a pin-compatible sibling in the same NexFET family and same 8-VSONP package. Check the Rds(on) and gate-charge specs against your application — the two parts differ in those parameters, so confirm your loss budget allows the swap.

What is the typical gate charge of CSD18532Q5B?

Maximum total gate charge is 58 nC at 10 V gate-source voltage. This is the charge the gate driver must deliver to switch the FET on; a driver with 2 A peak current handles it cleanly.