CSD18513Q5A

Texas Instruments · NexFET™ Series

Texas Instruments NexFET™ N-Channel MOSFET, 40V Vdss, 124A Id, 5.3mOhm Rds(on) at 10V, 8-PowerTDFN (5x6 VSONP), -55°C to 150°C junction temperature.

Texas Instruments CSD18513Q5A
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

CSD18513Q5A specifications
Parameter / AttributeSpecification / Value
SeriesNexFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C124A (Tc)
Power dissipation96W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.4V @ 250µA
Rds on (Max) @ id, vgs5.3mOhm @ 19A, 10V
Gate charge (Qg) (Max) @ vgs61 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4280 pF @ 20 V

Technical details

CSD18513Q5A
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