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Texas Instruments CSD18513Q5A
Texas Instruments

CSD18513Q5A N-Channel NexFET MOSFET, 40V 124A, 5.3mOhm

MPNCSD18513Q5A
End of Life

Texas Instruments NexFET™ N-Channel MOSFET, 40V Vdss, 124A Id, 5.3mOhm Rds(on) at 10V, 8-PowerTDFN (5x6 VSONP), -55°C to 150°C junction temperature.

$1.22Ref. price · indicative, final on quote
CSD18513Q5A datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

CSD18513Q5A Technical Specifications
ParameterValue
SeriesNexFET™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C124A (Tc)
Power dissipation96W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.4V @ 250µA
Rds on (Max) @ id, vgs5.3mOhm @ 19A, 10V
Gate charge (Qg) (Max) @ vgs61 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4280 pF @ 20 V

Product details

Rds(on) and gate drive — what they mean for the power stage

The CSD18513Q5A: The on-resistance is 5.3 mOhm at 19 A drain current with a 10 V gate drive. Gate charge is 61 nC at 10 V.

Package and thermal handling

The 8-PowerTDFN (VSONP 5x6) has an exposed drain pad on the bottom that must be soldered to a copper land on the PCB for thermal and electrical connection. Maximum power dissipation is 96 W at the case.

Active lifecycle — no LTB pressure

The CSD18513Q5A carries an Active lifecycle status as of the current record, with ROHS3 compliance. There is no last-time-buy notice or obsolescence risk on this part today. For a BOM line that needs a 40 V N-channel in a 5x6 PowerTDFN, this is a current-production choice — no date-code scavenging or surplus-channel dependency.

Frequently asked questions

What is the Rds(on) of CSD18513Q5A at typical operating conditions?

The maximum Rds(on) is 5.3 mOhm at a drain current of 19 A with a 10 V gate drive. At a 4.5 V gate drive the on-resistance will be higher; the datasheet curve should be consulted for the exact value at the intended operating point.

What is the maximum drain current rating of CSD18513Q5A?

The continuous drain current is 124 A at a 25°C case temperature. That rating is package- and thermal-limited; derating applies as case temperature rises above 25°C.

What is the gate charge of CSD18513Q5A?

The maximum gate charge is 61 nC at a 10 V gate drive. This value determines the gate-driver power requirement and switching transition times.