Conduction loss and the 1.7 mOhm Rds(on) at 100 A
The Texas Instruments CSD18510KTT is a NexFET N-channel power MOSFET in a TO-263-3 (D²Pak) package. At 100 A the dissipation is 17 W from Rds(on) alone, which drives the heatsink and PCB copper area budget.
40 V drain rating — rail voltage headroom
Rated for a 40 V drain-to-source voltage, this part fits 12 V and 24 V bus architectures with margin for transients. The 274 A continuous drain current at a 25°C case temperature is a package-limited rating; real-world current is derated by the junction temperature, switching frequency, and PCB thermal resistance.
Gate charge and driver selection
Total gate charge is 153 nC at a 10 V gate drive. A 100 kHz switching frequency demands an average gate-drive current of about 15 mA from the driver IC, plus the peak current to charge the input capacitance of 11400 pF. The 4.5 V minimum drive voltage allows logic-level gate drive, though the 10 V drive achieves the lowest Rds(on).
Temperature range and deployment environments
This suits designs in engine-bay electronics, high-ambient power supplies, and downhole instrumentation where the die temperature can push past 150°C under full load.