Texas Instruments CSD18502Q5B NexFET N-Channel Power MOSFET, 40V Vdss, 26A (Ta) / 100A (Tc) continuous drain, 2.3mOhm Rds(on) at 10V, 8-VSON-CLIP (5x6) package, -55 to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 26A (Ta), 100A (Tc) |
| Power dissipation | 3.2W (Ta), 156W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.2V @ 250µA |
| Rds on (Max) @ id, vgs | 2.3mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 68 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5070 pF @ 20 V |
The CSD18502Q5B: N-channel NexFET power MOSFET rated for 40 V drain-to-source and 100 A continuous drain current at case temperature.
2.3 mOhm Rds(on) at 30 A with 10 V on the gate. 68 nC gate charge at 10 V. Input capacitance 5070 pF at 20 V Vds.
The CSD18502Q5B can be driven with 4.5 V on the gate for reduced on-resistance, but the lowest Rds(on) is specified at 10 V. It is not a true logic-level FET (which typically guarantees full enhancement at 2.5 V or 1.8 V); a 3.3 V gate drive will not fully turn it on.