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Texas Instruments CSD18502Q5B
Texas Instruments

CSD18502Q5B NexFET N-Channel MOSFET, 40V, 100A, 2.3mOhm

MPNCSD18502Q5B
End of Life

Texas Instruments CSD18502Q5B NexFET N-Channel Power MOSFET, 40V Vdss, 26A (Ta) / 100A (Tc) continuous drain, 2.3mOhm Rds(on) at 10V, 8-VSON-CLIP (5x6) package, -55 to 150°C junction temperature.

$2.73Ref. price · indicative, final on quote
CSD18502Q5B datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

CSD18502Q5B Technical Specifications
ParameterValue
SeriesNexFET™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C26A (Ta), 100A (Tc)
Power dissipation3.2W (Ta), 156W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.2V @ 250µA
Rds on (Max) @ id, vgs2.3mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs68 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5070 pF @ 20 V

Product details

What this 40 V NexFET brings to a power stage

The CSD18502Q5B: N-channel NexFET power MOSFET rated for 40 V drain-to-source and 100 A continuous drain current at case temperature.

Rds(on) and gate drive — what the numbers mean for the BOM

2.3 mOhm Rds(on) at 30 A with 10 V on the gate. 68 nC gate charge at 10 V. Input capacitance 5070 pF at 20 V Vds.

Thermal and package — fitting it into the layout

Exposed drain pad on the bottom must be soldered to a copper plane to achieve 156 W power dissipation at case temperature.

Lifecycle and sourcing

No second-source or pin-compatible alternate is listed in the official cross-reference, so dual-sourcing would require a separate qualification.

Frequently asked questions

Is CSD18502Q5B a logic-level MOSFET?

The CSD18502Q5B can be driven with 4.5 V on the gate for reduced on-resistance, but the lowest Rds(on) is specified at 10 V. It is not a true logic-level FET (which typically guarantees full enhancement at 2.5 V or 1.8 V); a 3.3 V gate drive will not fully turn it on.