CSD17585F5T

Texas Instruments · FemtoFET™ Series

Texas Instruments FemtoFET™ N-Channel MOSFET, 30 V Vdss, 5.9 A continuous drain, 27 mOhm Rds(on) at 10 V, 3-PICOSTAR package, -55 to 150 °C operating junction temperature.

Texas Instruments CSD17585F5T
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

CSD17585F5T specifications
Parameter / AttributeSpecification / Value
SeriesFemtoFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C5.9A (Ta)
Power dissipation500mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs20V
TechnologyMOSFET (Metal Oxide)
Case3-SMD, No Lead
Vgs(th) (Max) @ id1.7V @ 250µA
Rds on (Max) @ id, vgs27mOhm @ 900mA, 10V
Gate charge (Qg) (Max) @ vgs5.1 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds380 pF @ 15 V

Technical details

The CSD17585F5T: ROHS3 compliant per, so it clears EU regulatory gates without an exemption review.

The 5.9 A continuous drain rating at 25 °C case temperature drops with board copper and ambient; in a typical 1 oz, 1-inch² pad on FR4, expect about 3.5 A practical limit before the 500 mW package dissipation is reached. At 5.9 A the I²R loss is under 1 W — the package can't sink that continuously, so the part is sized for pulsed or moderate-load duty where the thermal time constant of the board averages the dissipation.

3-PICOSTAR footprint — what it costs in assembly and thermal management

The 3-PICOSTAR is a 3-lead no-lead package roughly 1.0 mm × 0.6 mm — smaller than an SOT-23 by a factor of four. The drain is the large backside pad; the source and gate are the two small pads on the same face. Solder paste stencil aperture for the drain pad needs to be about 70 % of the pad area to avoid solder balling under reflow. The thermal path is almost entirely through the drain pad to the board copper — no lead frame to wick heat. A 0.6 mm pitch means the reflow profile must stay below 260 °C peak with a ramp rate under 3 °C/s to avoid tombstoning the tiny gate pad.

Gate charge and switching — 5.1 nC at 10 V

Total gate charge Qg is 5.1 nC at Vgs = 10 V. A 3.3 V GPIO from a microcontroller can drive the gate directly for low-frequency switching — the 380 pF input capacitance at 15 V drain bias means the gate rise time is about 1.3 µs with a 10 mA drive. For switching above 100 kHz, a dedicated gate driver with 2 A peak current cuts the rise time to under 10 ns.

CSD17585F5T
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