30 V, 25 A NexFET in an 8-PowerTDFN — what it handles
The Texas Instruments CSD17579Q5AT is an N-channel NexFET power MOSFET rated for 30 V drain-to-source voltage and 25 A continuous drain current at 25°C case temperature. The 9.7 mOhm maximum on-resistance at 8 A with a 10 V gate drive keeps conduction losses low in a load-switch or low-side switching role. Gate charge totals 15.1 nC at 10 V, a figure that governs switching speed and gate-driver current demand in DC-DC converters or motor-drive stages. The 8-PowerTDFN package (5x6 mm VSONP) is a surface-mount footprint common in compact power blocks; the junction temperature range of -55°C to 150°C covers automotive under-hood and industrial motor-drive environments.
ROHS3 compliant.