30 V, 25 A NexFET in a 5x6 SON — what the ratings mean for your power stage
The Texas Instruments CSD17579Q5A is a 30 V, 25 A N-channel NexFET MOSFET in a surface-mount package. It is designed for low-voltage DC-DC converters, load switches, and battery management in industrial and automotive environments. The 9.7 mOhm maximum on-resistance at 8 A with a 10 V gate drive keeps conduction losses low, while the 15.1 nC gate charge at 10 V allows moderate-frequency switching.
Package and footprint — 8-VSONP (5x6)
The 8-PowerTDFN package has an exposed thermal pad on the bottom. The pad must be soldered to a copper plane on the PCB for the rated 36 W power dissipation at the case. The 25 A continuous drain current is specified at 25°C ambient; derating is required above that temperature. The gate drive voltage range of 4.5 V to 10 V means the part can be driven from a 5 V logic rail, but the lowest Rds(on) is achieved at 10 V.
Sourcing and lifecycle
It is ROHS3 compliant.
