CSD17579Q5A

Texas Instruments · NexFET™ Series

Texas Instruments CSD17579Q5A NexFET N-Channel MOSFET, 30 V drain-source, 25 A continuous drain, 9.7 mOhm Rds(on) at 10 V, 15.1 nC gate charge, 8-PowerTDFN / 8-VSONP (5x6) package, -55 to 150°C operating temperature.

Texas Instruments CSD17579Q5A
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

CSD17579Q5A specifications
Parameter / AttributeSpecification / Value
SeriesNexFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C25A (Ta)
Power dissipation3.1W (Ta), 36W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs9.7mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs15.1 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1030 pF @ 15 V

Technical details

The Texas Instruments CSD17579Q5A is a 30 V, 25 A N-channel NexFET MOSFET in a surface-mount package. It is designed for low-voltage DC-DC converters, load switches, and battery management in industrial and automotive environments. The 9.7 mOhm maximum on-resistance at 8 A with a 10 V gate drive keeps conduction losses low, while the 15.1 nC gate charge at 10 V allows moderate-frequency switching.

Package and footprint — 8-VSONP (5x6)

The 25 A continuous drain current is specified at 25°C ambient; derating is required above that temperature. The gate drive voltage range of 4.5 V to 10 V means the part can be driven from a 5 V logic rail, but the lowest Rds(on) is achieved at 10 V.

It is ROHS3 compliant.

CSD17579Q5A
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