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Texas Instruments CSD17577Q5AT

CSD17577Q5AT NexFET N-Ch 30V 60A MOSFET, 4.2mOhm Rds(on)

MPNCSD17577Q5AT
End of Life

CSD17577Q5AT, Texas Instruments NexFET™ series, N-Channel MOSFET, 30V Vds, 60A Id, 4.2mOhm Rds(on) at 10V, 35nC Qg, 8-PowerTDFN (VSONP 5x6), -55°C to 150°C.

$1.43Ref. price · indicative, final on quote
Texas Instruments CSD17577Q5AT datasheet (PDF)
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesNexFET™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CSD17577Q5AT specifications
ParameterValue
SeriesNexFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C60A (Ta)
Power dissipation3W (Ta), 53W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id1.8V @ 250µA
Rds on (Max) @ id, vgs4.2mOhm @ 18A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2310 pF @ 15 V

Product details

What this NexFET N-channel MOSFET brings to the board

The Texas Instruments CSD17577Q5AT is a 30 V, 60 A N-channel MOSFET from the NexFET™ series, built in a surface-mount 8-PowerTDFN package (VSONP 5x6).

At 4.2 mOhm max at 18 A and 10 V gate drive, conduction loss is low enough for 60 A continuous drain current in a 53 W package (case temperature).

Package and mounting — the VSONP footprint

Solder the pad to a copper plane on the PCB; the datasheet's recommended land pattern is the reference.

It is ROHS3 compliant, with a maximum gate-source voltage of ±20 V.

Frequently asked questions

What is the Rds(on) of CSD17577Q5AT?

The maximum on-resistance is 4.2 mOhm at a drain current of 18 A and a gate-source voltage of 10 V. At 4.5 V drive the Rds(on) is higher — the datasheet curve shows the typical value.

Is CSD17577Q5AT RoHS compliant?

Yes, the CSD17577Q5AT is ROHS3 compliant.