Texas Instruments NexFET N-Channel MOSFET, CSD17577Q5A, 30V Vdss, 60A Id, 4.2mOhm Rds(on) at 10V, 35nC Qg, 8-VSONP (5x6) package, -55 to 150°C.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 60A (Ta) |
| Power dissipation | 3W (Ta), 53W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 1.8V @ 250µA |
| Rds on (Max) @ id, vgs | 4.2mOhm @ 18A, 10V |
| Gate charge (Qg) (Max) @ vgs | 35 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2310 pF @ 15 V |
The 60 A continuous rating at 25 °C is a package-limited number on a single-layer test board. The real constraint is the 3 W maximum power dissipation at 25 °C ambient (Ta) versus 53 W at the case (Tc). In a real layout with the 8-VSONP exposed pad soldered to a copper plane, the effective current is derated by the junction-to-ambient thermal resistance and the ambient temperature.
The maximum Rds(on) is 4.2 mOhm at Vgs = 10 V and Id = 18 A. The drive voltage range for achieving this on-resistance is 4.5 V to 10 V, with the lowest Rds(on) at 10 V.
The continuous drain current is rated at 60 A at 25 °C (Ta). This is a package-limited rating; the practical current in a design is limited by the 3 W (Ta) / 53 W (Tc) power dissipation and the junction temperature staying below 150°C.
The maximum total gate charge (Qg) at Vgs = 10 V is 35 nC. This is a moderate gate charge for a 60 A FET, keeping the gate-driver current requirement around 3.5 mA per 100 kHz of switching frequency.