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Texas Instruments CSD17577Q5A

CSD17577Q5A NexFET N-Ch MOSFET, 30V 60A, 4.2mOhm Rds(on)

MPNCSD17577Q5A
End of Life

Texas Instruments NexFET N-Channel MOSFET, CSD17577Q5A, 30V Vdss, 60A Id, 4.2mOhm Rds(on) at 10V, 35nC Qg, 8-VSONP (5x6) package, -55 to 150°C.

$0.84Ref. price · indicative, final on quote
Packaging8-PowerTDFN
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MOQ1 pcs
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Specifications

CSD17577Q5A Technical Specifications
ParameterValue
SeriesNexFET™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C60A (Ta)
Power dissipation3W (Ta), 53W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id1.8V @ 250µA
Rds on (Max) @ id, vgs4.2mOhm @ 18A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2310 pF @ 15 V

Product details

4.2 mOhm Rds(on) at 10 V — the conduction-loss floor

The headline spec is the 4.2 mOhm maximum on-resistance at Vgs = 10 V and 18 A — this sets the conduction loss floor for a synchronous rectifier or load switch. The 35 nC typical gate charge at 10 V keeps the gate-drive current moderate for switching frequencies up to a few hundred kilohertz.

60 A drain current — what the thermal budget actually limits

The 60 A continuous rating at 25 °C is a package-limited number on a single-layer test board. The real constraint is the 3 W maximum power dissipation at 25 °C ambient (Ta) versus 53 W at the case (Tc). In a real layout with the 8-VSONP exposed pad soldered to a copper plane, the effective current is derated by the junction-to-ambient thermal resistance and the ambient temperature.

Active production, ROHS3, and the 8-VSONP footprint

The 8-VSONP (5x6 mm) package has a large exposed thermal pad on the bottom; the PCB layout must include a matching copper land and at least nine thermal vias to pull heat into the inner layers.

Frequently asked questions

What is the Rds(on) of CSD17577Q5A?

The maximum Rds(on) is 4.2 mOhm at Vgs = 10 V and Id = 18 A. The drive voltage range for achieving this on-resistance is 4.5 V to 10 V, with the lowest Rds(on) at 10 V.

What is the maximum drain current of CSD17577Q5A?

The continuous drain current is rated at 60 A at 25 °C (Ta). This is a package-limited rating; the practical current in a design is limited by the 3 W (Ta) / 53 W (Tc) power dissipation and the junction temperature staying below 150°C.

What is the gate charge of CSD17577Q5A?

The maximum total gate charge (Qg) at Vgs = 10 V is 35 nC. This is a moderate gate charge for a 60 A FET, keeping the gate-driver current requirement around 3.5 mA per 100 kHz of switching frequency.