2.3 mOhm at 10 V — the conduction loss floor
The CSD17575Q3T NexFET N-channel MOSFET has a 2.3 mOhm maximum on-resistance at Vgs=10 V and 25 A.
Gate drive and switching edge
Total gate charge is 30 nC at Vgs=4.5 V. Input capacitance is 4420 pF at Vds=15 V. Threshold voltage is 1.8 V at 250 µA.
The 8-VSON-CLIP (3.3x3.3 mm) package uses a large copper clip on the drain pad — the supplier device package code is 8-VSON-CLIP. Power dissipation is rated 2.8 W at 25 °C ambient and 108 W at 25 °C case, so the board copper area under the exposed pad is the limiting factor. A 4-layer board with thermal vias to the inner ground plane keeps the junction below 125 °C at 25 A continuous.