NexFET N-channel for 12 V / 5 V rails
The CSD17571Q2: Texas Instruments NexFET N-channel MOSFET for 30 V drain-source voltage and 22 A continuous drain current. The 29 mOhm maximum on-resistance at 4.5 V Vgs sets the conduction loss budget for a 5 A rail switch, and the 3.1 nC gate charge keeps gate-drive losses low.
Rds(on) is specified at both 4.5 V and 10 V drive, so the part is optimised for logic-level gate drive from a 5 V rail or a dedicated 10 V gate supply. The 29 mOhm max at 4.5 V means the designer can run the gate directly from a 5 V PWM output without a boost stage. Input capacitance Ciss is 468 pF at 15 V Vds, and total gate charge is 3.1 nC at 4.5 V. These numbers keep the switching transition fast enough for high-frequency converters while staying within the drive capability of a standard MOSFET driver.
Package and thermal design
The small footprint suits compact power stages in portable equipment and point-of-load regulators. Operating junction temperature range is -55 to 150 °C, covering industrial and automotive under-hood environments where the MOSFET may see sustained high ambient temperatures.