CSD17570Q5B

Texas Instruments · NexFET™ Series

Texas Instruments NexFET™ N-Channel MOSFET, 30V Vdss, 100A Id, 0.69 mOhm Rds(on) at 10V, 8-PowerTDFN (5x6 VSON-CLIP), -55°C to 150°C junction.

Texas Instruments CSD17570Q5B
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[IN STOCK] In Stock: 99 pcs
$2.63/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

CSD17570Q5B specifications
Parameter / AttributeSpecification / Value
SeriesNexFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C100A (Ta)
Power dissipation3.2W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id1.9V @ 250µA
Rds on (Max) @ id, vgs0.69mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs121 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds13600 pF @ 15 V

Technical details

The drive voltage range (4.5 V to 10 V for rated Rds(on)) allows logic-level drive from a 5 V rail, though the lowest on-resistance is achieved at 10 V.

Thermal reality behind the 100 A rating

The 100 A continuous drain rating is at 25 °C case temperature, but the maximum power dissipation is 3.2 W at 25 °C ambient. In practice, the continuous current is limited by the board's ability to sink heat from the 8-VSON-CLIP (5x6 mm) package.

The 8-PowerTDFN (5x6 VSON-CLIP) package has an exposed drain pad on the bottom. The PCB layout must use multiple vias under the pad to conduct heat to inner copper planes — the datasheet's recommended footprint is non-negotiable for achieving the rated current. Surface-mount assembly with a standard reflow profile works; the package is ROHS3 compliant.

It is quoted to order against BOM quantities through independent distribution.

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