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Texas Instruments CSD17556Q5B

CSD17556Q5B NexFET N-Channel MOSFET, 30V, 1.4mOhm, 8-VSON

MPNCSD17556Q5B
End of Life

Texas Instruments NexFET™, N-Channel MOSFET, 30 V Vdss, 1.4 mOhm Rds(on) max at 40 A, 10 V, 34 A (Ta) / 100 A (Tc), -55 to 150°C, 8-PowerTDFN / 8-VSON-CLIP (5x6), Surface Mount.

$2.5Ref. price · indicative, final on quote
Texas Instruments CSD17556Q5B datasheet (PDF)
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesNexFET™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CSD17556Q5B specifications
ParameterValue
SeriesNexFET™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C34A (Ta), 100A (Tc)
Power dissipation3.1W (Ta), 191W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id1.65V @ 250µA
Rds on (Max) @ id, vgs1.4mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs39 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds7020 pF @ 15 V

Product details

N-channel power MOSFET from the NexFET™ family, rated for 30 V drain-to-source voltage and 34 A (Ta) / 100 A (Tc) continuous drain current. Maximum on-resistance is 1.4 mOhm at 40 A with 10 V gate drive.

At 40 A, dissipation in the channel is manageable with good PCB copper area but not without it.

Gate drive and switching considerations

The drive voltage range is specified for both 4.5 V and 10 V. At 4.5 V the Rds(on) is higher than the 1.4 mOhm at 10 V, but the gate charge is lower — 39 nC at 4.5 V.

It is RoHS3 compliant.

Frequently asked questions

What is the replacement or equivalent for CSD17556Q5B?

No direct pin-compatible replacement is listed in the official records. The part is active, so a replacement is not needed. For a second-source evaluation, compare the Rds(on), gate charge, and package footprint with other 30 V N-channel MOSFETs in the 8-VSON-CLIP package.