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Texas Instruments CSD17556Q5B
Texas Instruments

CSD17556Q5B NexFET N-Channel MOSFET, 30V, 1.4mOhm, 8-VSON

MPNCSD17556Q5B
End of Life

Texas Instruments NexFET™, N-Channel MOSFET, 30 V Vdss, 1.4 mOhm Rds(on) max at 40 A, 10 V, 34 A (Ta) / 100 A (Tc), -55 to 150°C, 8-PowerTDFN / 8-VSON-CLIP (5x6), Surface Mount.

$2.5Ref. price · indicative, final on quote
CSD17556Q5B datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

CSD17556Q5B Technical Specifications
ParameterValue
SeriesNexFET™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C34A (Ta), 100A (Tc)
Power dissipation3.1W (Ta), 191W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id1.65V @ 250µA
Rds on (Max) @ id, vgs1.4mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs39 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds7020 pF @ 15 V

Product details

What the CSD17556Q5B is and where it fits

N-channel power MOSFET from the NexFET™ family, rated for 30 V drain-to-source voltage and 34 A (Ta) / 100 A (Tc) continuous drain current. Maximum on-resistance is 1.4 mOhm at 40 A with 10 V gate drive.

Key ratings and what they mean for the BOM

The 1.4 mOhm Rds(on) at 10 V is the headline number for conduction loss. At 40 A, dissipation in the channel is manageable with good PCB copper area but not without it.

Temperature range and deployment environment

The -55°C to 150°C junction temperature range qualifies this MOSFET for military, avionics, downhole, and engine-bay applications where the ambient can swing well beyond commercial limits.

Gate drive and switching considerations

The drive voltage range is specified for both 4.5 V and 10 V. At 4.5 V the Rds(on) is higher than the 1.4 mOhm at 10 V, but the gate charge is lower — 39 nC at 4.5 V.

Lifecycle and sourcing

It is RoHS3 compliant.

Frequently asked questions

What is the replacement or equivalent for CSD17556Q5B?

No direct pin-compatible replacement is listed in the official records. The part is active, so a replacement is not needed. For a second-source evaluation, compare the Rds(on), gate charge, and package footprint with other 30 V N-channel MOSFETs in the 8-VSON-CLIP package.