6.2 mOhm at 15 A, 10 V drive — the conduction loss floor
The Texas Instruments CSD17552Q5A is a NexFET series N-channel MOSFET in an 8-PowerTDFN package, rated for 30 V drain-to-source.
12 nC gate charge — logic-level drive ready
Gate charge is 12 nC max at 4.5 V, which means a 5 V logic-level gate driver can switch this FET without a separate gate-drive boost stage. The drive voltage range of 4.5 V to 10 V for achieving the rated Rds(on) covers both 5 V logic and 10 V gate-drive rails. Input capacitance is 2050 pF at 15 V drain bias — modest enough that the gate driver's peak current capability sets the switching speed, not the FET's input charge.
The 3 W power dissipation at ambient (Ta) is the limit with minimal copper; the actual thermal capability depends on the PCB's copper area under the exposed pad.
It is ROHS3 compliant, with no lead or restricted substances above the threshold.