Texas Instruments · NexFET™ Series
Texas Instruments NexFET™ N-Channel MOSFET, 30 V drain-source, 5 A continuous drain, 30 mOhm Rds(on) at 4 A / 8 V, 2.7 nC gate charge, 6-WSON (2x2 mm) exposed pad package, -55°C to 150°C junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 3V, 8V |
| Current - continuous drain (Id) @ 25°C | 5A (Ta) |
| Power dissipation | 2.4W (Ta), 17W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +10V, -8V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-WDFN Exposed Pad |
| Vgs(th) (Max) @ id | 1.8V @ 250µA |
| Rds on (Max) @ id, vgs | 30mOhm @ 4A, 8V |
| Gate charge (Qg) (Max) @ vgs | 2.7 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 340 pF @ 15 V |
The CSD17313Q2T: Key switching characteristics include a maximum Rds(on) of 30 mOhm at 4 A with an 8 V gate drive, and a gate charge of 2.7 nC at 4.5 V. The low gate charge keeps driver losses minimal in high-frequency dc-dc converters, while the 340 pF input capacitance at 15 V Vds gives the designer a clean number for gate-drive sizing and switching-loss estimation.
It is ROHS3 compliant.
