Texas Instruments NexFET™ N-Channel MOSFET, 30 V drain-source, 5 A continuous drain, 30 mOhm Rds(on) at 4 A, 8 V gate drive, 2.7 nC gate charge, 6-WSON (2x2 mm) exposed pad, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 3V, 8V |
| Current - continuous drain (Id) @ 25°C | 5A (Tc) |
| Power dissipation | 2.3W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +10V, -8V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-WDFN Exposed Pad |
| Vgs(th) (Max) @ id | 1.8V @ 250µA |
| Rds on (Max) @ id, vgs | 30mOhm @ 4A, 8V |
| Gate charge (Qg) (Max) @ vgs | 2.7 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 340 pF @ 15 V |
The CSD17313Q2: The 6-WSON exposed-pad package (2x2 mm body) is a surface-mount design. The small footprint suits it for dense layouts, but the pad pattern and via array under the pad are critical for thermal performance — a standard two-layer board with a few thermal vias will handle the 2.3 W, but verify the junction temperature stays below 150°C under worst-case load.
It is ROHS3 compliant.
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