2 mOhm at 30 A — the headline on-resistance for a 30 V NexFET
The CSD17311Q5 is a Texas Instruments NexFET N-channel MOSFET rated for 30 V drain-to-source and a continuous drain current of 32 A at 25 °C ambient, or 100 A at the case. The max on-resistance is 2 mOhm at 30 A with an 8 V gate drive — that's the number that matters for conduction loss in a point-of-load converter or a low-voltage OR-ing diode replacement.
31 nC gate charge at 4.5 V — what the switching numbers mean
The gate charge is spec'd at 31 nC with a 4.5 V drive. For a 30 V FET in a 5x6 mm VSON-CLIP package, that's a low Qg — it means the gate-driver doesn't need to push much current to hit moderate switching frequencies. Pair this with the 4280 pF input capacitance at 15 V Vds, and the switching losses are manageable up to a few hundred kHz in a buck converter, provided the layout keeps the gate loop tight.
Active production — no end-of-life risk on this BOM line
That means no last-time-buy window to track, no forced redesign for a drop-in replacement. It's ROHS3 compliant, and the 8-VSON-CLIP (5x6) package with the exposed drain clip is a standard footprint for this class of low-voltage NexFET.