NexFET N-channel at 30 V — what the 5.4 mOhm Rds(on) buys you
The Texas Instruments CSD17309Q3 is an N-channel NexFET power MOSFET rated for 30 V drain-to-source and a continuous drain current of 20 A at 25 °C ambient (60 A at case temperature).
Gate charge and switching edge
Total gate charge is 10 nC at 4.5 V, which means a modest gate driver — say one capable of 1 A peak — can switch this FET in under 20 ns, keeping cross-conduction losses low in a 500 kHz buck converter. Input capacitance Ciss is 1440 pF at 15 V Vds; that figure sets the driver's dynamic power budget and the gate-drive loop's resonant frequency.
Package and thermal path
The 8-VSON-CLIP package (3.3x3.3 mm) uses a copper clip over the die, reducing package resistance and pulling heat into the board's copper plane through the exposed pad. Maximum power dissipation at 25 °C ambient is 2.8 W; in practice the board's copper area and airflow set the real thermal limit — the 60 A case rating assumes a heatsink or large copper pour.
Lifecycle and compliance
It is ROHS3 compliant.