NexFET N-channel — 25 V, 1.9 mOhm in a 5x6 mm clip package
The Texas Instruments CSD16414Q5 is a NexFET N-channel MOSFET rated for 25 V drain-source, with an on-resistance of 1.9 mOhm maximum at 30 A and 10 V gate drive. It carries a continuous drain current of 34 A at 25 °C ambient (Ta) and 100 A at case temperature (Tc), making it a fit for 12 V input synchronous buck converters, OR-ing diodes, and load switches where board space is tight. The package measures 5x6 mm and uses a copper clip construction. Gate charge is 21 nC at 4.5 V.
Rds(on) and gate charge — what they mean for the switching loop
At 1.9 mOhm max with 10 V gate drive, the CSD16414Q5 delivers a conduction loss of roughly 1.9 W at 30 A — acceptable for a 3.2 W package dissipation limit when the board copper and airflow are adequate. The 21 nC Qg at 4.5 V means the driver sees a moderate capacitive load; a standard 2 A gate driver can switch it in under 30 ns, supporting the high-frequency-switching use case a buyer may be evaluating. Input capacitance is 3650 pF at 12.5 V Vds.
Temperature range and package — deployment context
Junction temperature range is -55 to 150 °C. The package has an exposed pad for thermal relief.
Lifecycle and sourcing posture
The CSD16414Q5 is listed as Active with ROHS3 compliance. No end-of-life notice or last-time-buy schedule has been issued.