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Texas Instruments CSD16413Q5A
Texas Instruments

CSD16413Q5A NexFET N-Ch MOSFET, 25V, 3.9mOhm, 8-VSONP

MPNCSD16413Q5A
End of Life

Texas Instruments NexFET™ N-Channel MOSFET, CSD16413Q5A, 25V Vdss, 24A (Ta) / 100A (Tc), 3.9mOhm Rds(on) at 24A/10V, 11.7nC Qg at 4.5V, 8-PowerTDFN / 8-VSONP (5x6), -55°C to 150°C.

$1.35Ref. price · indicative, final on quote
CSD16413Q5A datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
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Specifications

CSD16413Q5A Technical Specifications
ParameterValue
SeriesNexFET™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage25 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C24A (Ta), 100A (Tc)
Power dissipation3.1W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs+16V, -12V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id1.9V @ 250µA
Rds on (Max) @ id, vgs3.9mOhm @ 24A, 10V
Gate charge (Qg) (Max) @ vgs11.7 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds1780 pF @ 12.5 V

Product details

Low Rds(on) at the operating point that matters

The CSD16413Q5A: This is the conduction-loss spec that defines the part in a 12 V or 5 V rail — at 24 A the voltage drop is under 94 mV, which keeps the junction temperature rise manageable in a tight thermal budget. Gate charge is 11.7 nC at 4.5 V, enabling fast switching with a standard gate driver.

Thermal and package constraints for the layout

The 1780 pF input capacitance at 12.5 V Vds is moderate — a 10 Ω gate resistor will keep the switching edge under control without excessive ringing.

Frequently asked questions

What is the Rds(on) of CSD16413Q5A?

At 4.5 V drive the Rds(on) will be higher — the datasheet typical curve shows approximately 5.5 mOhm at that lower gate voltage.

What is the gate charge of CSD16413Q5A?

Maximum gate charge (Qg) is 11.7 nC at 4.5 V Vgs. This low Qg makes the FET suitable for high-frequency switching without requiring a high-current gate driver.