Texas Instruments NexFET™ N-Channel MOSFET, CSD16409Q3, 25 V Vdss, 8.2 mOhm Rds(on) at 17 A, 5.6 nC gate charge, 8-VSONP (5x6) package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 25 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 15A (Ta), 60A (Tc) |
| Power dissipation | 2.6W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +16V, -12V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.3V @ 250µA |
| Rds on (Max) @ id, vgs | 8.2mOhm @ 17A, 10V |
| Gate charge (Qg) (Max) @ vgs | 5.6 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 800 pF @ 12.5 V |
The Texas Instruments CSD16409Q3 is an N-channel NexFET MOSFET rated for 25 V drain-to-source voltage and a continuous drain current of 15 A at 25°C ambient (60 A at case temperature).
The 5.6 nC gate charge at 4.5 V means a 5 V logic-level gate driver can switch the MOSFET at moderate frequencies without a separate driver IC; the drive voltage range of 4.5 V to 10 V gives flexibility to use either a 5 V or 10 V gate rail.
The gate charge is specified at 4.5 V, confirming the part is optimised for low-voltage gate drive.