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Texas Instruments CSD16409Q3
Texas Instruments

CSD16409Q3 NexFET N-Ch MOSFET, 25V, 8.2mOhm, 8-VSONP

MPNCSD16409Q3
End of Life

Texas Instruments NexFET™ N-Channel MOSFET, CSD16409Q3, 25 V Vdss, 8.2 mOhm Rds(on) at 17 A, 5.6 nC gate charge, 8-VSONP (5x6) package, -55°C to 150°C junction temperature.

$1.02Ref. price · indicative, final on quote
CSD16409Q3 datasheet
Packaging8-PowerTDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

CSD16409Q3 Technical Specifications
ParameterValue
SeriesNexFET™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage25 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C15A (Ta), 60A (Tc)
Power dissipation2.6W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs+16V, -12V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2.3V @ 250µA
Rds on (Max) @ id, vgs8.2mOhm @ 17A, 10V
Gate charge (Qg) (Max) @ vgs5.6 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds800 pF @ 12.5 V

Product details

Active NexFET — 25 V, 8.2 mOhm, 5.6 nC gate charge

The Texas Instruments CSD16409Q3 is an N-channel NexFET MOSFET rated for 25 V drain-to-source voltage and a continuous drain current of 15 A at 25°C ambient (60 A at case temperature).

The 5.6 nC gate charge at 4.5 V means a 5 V logic-level gate driver can switch the MOSFET at moderate frequencies without a separate driver IC; the drive voltage range of 4.5 V to 10 V gives flexibility to use either a 5 V or 10 V gate rail.

Package and thermal — 8-VSONP rework notes

The 8-VSONP package has an exposed thermal pad on the bottom.

Frequently asked questions

Is CSD16409Q3 compatible with 5V gate drive?

The gate charge is specified at 4.5 V, confirming the part is optimised for low-voltage gate drive.