NexFET N-channel for 25 V rails
The Texas Instruments CSD16327Q3T is a NexFET N-channel MOSFET rated for 25 V drain-to-source and 60 A continuous drain current at 25°C case temperature. It comes in an 8-PowerTDFN package with a 3.3x3.3 mm VSON-CLIP footprint, designed for surface-mount power stages where board area is tight. Typical applications include synchronous buck converter low-side switches, OR-ing diodes, and load switches in telecom, computing, and industrial power supplies operating from 3 V to 8 V gate drive.
4 mOhm on-resistance at 24 A
The 4 mOhm max Rds(on) at 24 A and 8 V gate drive keeps conduction losses low in high-current paths. For designs running from a 3 V gate drive, the device still achieves its minimum on-resistance specification.
Active lifecycle, no LTB risk
The NexFET series is a standard TI portfolio, and the CSD16327Q3T is available through independent distribution channels. For BOM planning, the active status means it can be specified into new designs without near-term obsolescence concern.
Package and footprint details
The 8-PowerTDFN package uses a VSON-CLIP construction with an exposed drain pad for thermal management. The supplier device package footprint is 3.3x3.3 mm, which fits into compact power-stage layouts. The device is rated for an operating junction temperature range of -55°C to 150°C, covering industrial and automotive under-hood environments where thermal cycling is a factor.