25 V, 60 A NexFET — the switching loss story
The CSD16327Q3 is a 25 V, 60 A N-channel NexFET from Texas Instruments in an 8-VSON-CLIP package. The headline number is the 4 mOhm max on-resistance at 8 V gate drive and 24 A drain current — that is the conduction loss you budget for a 12 V input point-of-load converter or a high-current load switch.
Gate charge is 8.4 nC max at 4.5 V. That is low enough that a 3.3 V logic-level gate driver can switch it without a separate driver IC — the driver only needs to source about 8 nC per switching cycle. The drive voltage range for minimum Rds(on) is 8 V; the part still turns on hard at 3 V, so a 5 V PWM signal from an MCU works for lower-current loads.
Junction temperature range and the 8-VSON-CLIP package
Junction temperature range is -55 to 150 °C — full military temp on the die, so it handles under-hood automotive or outdoor telecom enclosures where ambient hits 85 °C and self-heating adds margin. The 8-VSON-CLIP (3.3x3.3 mm) package uses a copper clip bond instead of wire bonds, which keeps package resistance low and conducts heat into the PCB pad. Hand-solderable with a fine tip if you have a thermal pad on the board; the clip bond is robust enough that a field swap is practical without a hot-air station.
Sourcing and lifecycle posture
ROHS3 compliant.