What this NexFET™ N-channel is and where it fits
The Texas Instruments CSD16322Q5 is a 25 V N-channel NexFET™ power MOSFET in a surface-mount package. It is designed for low-voltage DC-DC conversion, load switching, and battery protection in industrial, telecom, and automotive environments. The 5 mOhm typical on-resistance at 20 A keeps conduction losses low, and the 9.7 nC gate charge at 4.5 V means a modest gate driver can switch it fast.
Rds(on) and current ratings — what they mean for your BOM
The 5 mOhm Rds(on) at 20 A and 8 V gate drive determines I²R loss and heatsink requirement. The 3.1 W package limit at 25 °C ambient gives headroom with good board layout.
Gate drive and switching speed
Gate charge is 9.7 nC at 4.5 V, and the drive voltage range for minimum Rds(on) is 3 V to 8 V. Input capacitance Ciss is 1365 pF at 12.5 V Vds.
Lifecycle and sourcing reality
The CSD16322Q5 carries an Active lifecycle status. No end-of-life notice or last-time-buy window is on record. That means it remains a safe choice for new designs and production BOMs — no forced redesign risk from the manufacturer side. No direct pin-compatible second source from another brand is listed in the official cross-reference data, so if dual-sourcing is a requirement, qualify a functional equivalent through your own bench validation.