The CSD16301Q2: The on-resistance is specified at 24 mOhm maximum at 4 A drain current with an 8 V gate drive, which keeps conduction loss under 0.4 W at full rated current — practical for a 12 V input point-of-load load switch or a synchronous rectifier in a low-voltage DC/DC converter.
Total gate charge is 2.8 nC at 4.5 V gate drive, and the device is characterised for drive voltages as low as 3 V for minimum Rds(on) and 8 V for maximum Rds(on). That 2.8 nC figure means a 3.3 V logic output with a 10 mA drive capability can switch the FET in under 300 ns — no dedicated gate driver IC needed, saving a BOM line and board area.