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Texas Instruments CSD16301Q2
Texas Instruments

CSD16301Q2 NexFET N-Ch MOSFET, 25 V, 5 A, 24 mOhm

MPNCSD16301Q2
End of Life

Texas Instruments NexFET series, CSD16301Q2, N-Channel MOSFET, 25 Vdss, 5 A continuous drain, 24 mOhm Rds(on) at 4 A, 8 V, 2.8 nC gate charge, 6-SON package, -55°C to 150°C junction temperature.

$0.62Ref. price · indicative, final on quote
CSD16301Q2 datasheet
Packaging6-SMD, Flat Leads
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

CSD16301Q2 Technical Specifications
ParameterValue
SeriesNexFET™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage25 V
Drive voltage (Max rds on, min rds on)3V, 8V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation2.3W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs+10V, -8V
TechnologyMOSFET (Metal Oxide)
Case6-SMD, Flat Leads
Vgs(th) (Max) @ id1.55V @ 250µA
Rds on (Max) @ id, vgs24mOhm @ 4A, 8V
Gate charge (Qg) (Max) @ vgs2.8 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds340 pF @ 12.5 V

Product details

24 mOhm Rds(on) — conduction loss for 12 V rails

The CSD16301Q2: The on-resistance is specified at 24 mOhm maximum at 4 A drain current with an 8 V gate drive, which keeps conduction loss under 0.4 W at full rated current — practical for a 12 V input point-of-load load switch or a synchronous rectifier in a low-voltage DC/DC converter.

2.8 nC gate charge — drive from a 3.3 V GPIO

Total gate charge is 2.8 nC at 4.5 V gate drive, and the device is characterised for drive voltages as low as 3 V for minimum Rds(on) and 8 V for maximum Rds(on). That 2.8 nC figure means a 3.3 V logic output with a 10 mA drive capability can switch the FET in under 300 ns — no dedicated gate driver IC needed, saving a BOM line and board area.

Frequently asked questions

What is the CSD16301Q2 datasheet?

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