FemtoFET™ N-channel — tiny footprint, real current
The Texas Instruments CSD13381F4T is an N-channel MOSFET from the FemtoFET™ series, built for switching loads up to 2.1 A continuous drain at a 12 V drain-to-source voltage. It comes in the 3-PICOSTAR package (3-XFDFN), one of the smallest surface-mount packages TI offers for a discrete MOSFET this size. The on-resistance is rated at 180 mOhm maximum at 500 mA drive at 4.5 V gate voltage, with a gate charge of 1.4 nC — meaning fast switching with minimal gate-drive overhead.
What the 180 mOhm Rds(on) and 1.4 nC gate charge mean for your switching design
The 180 mOhm maximum on-resistance at 4.5 V gate drive sets conduction loss. The 1.4 nC gate charge at 4.5 V allows direct drive from a GPIO pin.
Active lifecycle — no obsolescence pressure for new BOMs
It is ROHS3 compliant.