Texas Instruments NexFET™ N-Channel MOSFET, 12 V Vds, 3.5 A Id, 10.2 mOhm Rds(on) at 4.5 V, 6-DSBGA (1x1.5 mm) package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | NexFET™ |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 12 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 3.5A (Ta) |
| Power dissipation | 1.9W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Case | 6-UFBGA, DSBGA |
| Vgs(th) (Max) @ id | 1.3V @ 250µA |
| Rds on (Max) @ id, vgs | 10.2mOhm @ 1.5A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 11.2 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 1370 pF @ 6 V |
The CSD13306WT: Gate drive for maximum Rds(on) is 4.5 V and minimum at 2.5 V. Gate charge is 11.2 nC at 4.5 V.
The CSD13306WT carries an Active lifecycle status. ROHS3 compliant, clearing the EU RoHS directive for new product introductions.
Yes, the part is listed as ROHS3 Compliant, meeting the EU RoHS directive requirements.