12 V NexFET in a 1x1.5 mm DSBGA — where it fits
CSD13306W is an N-Channel MOSFET with 12 V drain-source and 3.5 A continuous drain. Its 10.2 mOhm max on-resistance at 4.5 V gate drive suits low-voltage load switching, battery protection, and DC-DC converter synchronous rectification.
Rds(on) and gate drive — what 10.2 mOhm at 4.5 V means for your BOM
The 10.2 mOhm Rds(on) is specified at 4.5 V gate drive. The drive voltage range includes 2.5 V minimum for reduced Rds(on) and 4.5 V for full enhancement. Gate charge is 11.2 nC at 4.5 V. Input capacitance is 1370 pF at 6 V drain-source.
Package and thermal — the DSBGA reality
There is no exposed pad — heat spreads through the board copper. The 1.9 W power dissipation at 25 °C ambient assumes a standard JEDEC 2s2p board; real-world thermal performance depends on the number of vias and copper area under the part. For continuous loads above 2 A, a 4-layer board with thermal vias is recommended.
The 150°C ceiling allows operation in hot enclosures or near power stages without derating the junction, though the package's thermal resistance to ambient (not explicitly given here) will limit practical current at high ambient temperatures.
It is RoHS3 compliant.