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Taiwan Semiconductor Corporation US1G

Taiwan Semiconductor Corporation US1G

MPNUS1G
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DIODE GEN PURP 400V 1A DO214AC

$0.46Ref. price · indicative, final on quote
PackagingDO-214AC, SMA
RoHSNot applicable
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

US1G specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)400 V
Voltage - forward (Vf) (Max) @ if1.25 V @ 1 A
Current - reverse leakage @ vr5 µA @ 400 V
Current - average rectified1A
Operating temperature - junction-50°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyStandard
CaseDO-214AC, SMA
Reverse recovery time50 ns