Taiwan Semiconductor Corporation UGS20JH
MPNUGS20JH
Active
DIODE GEN PURP 600V 20A TO263AB
$1.9Ref. price · indicative, final on quote
PackagingTO-263AB (D2PAK)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 600 V |
| Voltage - forward (Vf) (Max) @ if | 2 V @ 20 A |
| Current - reverse leakage @ vr | 1 µA @ 600 V |
| Current - average rectified | 20A |
| Operating temperature - junction | -55°C ~ 150°C |
| Grade | Automotive |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | Standard |
| Qualification | AEC-Q101 |
| Capacitance @ vr, | 94.5pF @ 4V, 1MHz |
| Reverse recovery time | 50 ns |