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Taiwan Semiconductor Corporation TSM900N10CH X0G

Taiwan Semiconductor Corporation TSM900N10CH X0G

MPNTSM900N10CH X0G
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MOSFET N-CH 100V 15A TO251

$2.29Ref. price · indicative, final on quote
PackagingTO-251-3 Stub Leads, IPak
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TSM900N10CH X0G specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C15A (Tc)
Power dissipation50W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Stub Leads, IPak
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs90mOhm @ 5A, 10V
Gate charge (Qg) (Max) @ vgs9.3 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1480 pF @ 50 V