Taiwan Semiconductor Corporation TSM900N06CH X0G
MPNTSM900N06CH X0G
Active
MOSFET N-CHANNEL 60V 11A TO251
$0.6Ref. price · indicative, final on quote
PackagingTO-251-3 Stub Leads, IPak
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 25W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-251-3 Stub Leads, IPak |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 90mOhm @ 6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 9.3 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 500 pF @ 15 V |