Taiwan Semiconductor Corporation TSM650P02CX RFG
MPNTSM650P02CX RFG
Active
MOSFET P-CHANNEL 20V 4.1A SOT23
$0.7Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 1.8V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 4.1A (Tc) |
| Power dissipation | 1.56W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 800mV @ 250µA |
| Rds on (Max) @ id, vgs | 65mOhm @ 3A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 5.1 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 515 pF @ 10 V |