Taiwan Semiconductor Corporation TSM6502CR RLG
MPNTSM6502CR RLG
Active
MOSFET N/P-CH 60V 24A/18A 8DFN
$1.0Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N and P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60V |
| Current - continuous drain (Id) @ 25°C | 24A (Tc), 18A (Tc) |
| Power - max | 40W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| FET feature | Standard |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 10.3nC @ 4.5V, 9.5nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 1159pF @ 30V, 930pF @ 30V |