Skip to main content
Taiwan Semiconductor Corporation TSM60NC390CH C5G — Discrete Semiconductors

Taiwan Semiconductor Corporation TSM60NC390CH C5G

MPNTSM60NC390CH C5G
Active

600V, 11A, SINGLE N-CHANNEL POWE

$5.46Ref. price · indicative, final on quote
PackagingTO-251-3 Short Leads, IPak, TO-251AA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TSM60NC390CH C5G specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id5V @ 1mA
Rds on (Max) @ id, vgs390mOhm @ 3.8A, 10V
Gate charge (Qg) (Max) @ vgs21.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds818 pF @ 100 V