Taiwan Semiconductor Corporation TSM60NB900CH C5G
MPNTSM60NB900CH C5G
Active
MOSFET N-CHANNEL 600V 4A TO251
$2.9Ref. price · indicative, final on quote
PackagingTO-251-3 Short Leads, IPak, TO-251AA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4A (Tc) |
| Power dissipation | 36.8W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 900mOhm @ 1.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 9.6 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 315 pF @ 100 V |