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Taiwan Semiconductor Corporation TSM60NB099CF C0G

Taiwan Semiconductor Corporation TSM60NB099CF C0G

MPNTSM60NB099CF C0G
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MOSFET N-CH 600V 38A ITO220S

$12.87Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TSM60NB099CF C0G specifications
ParameterValue
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C38A (Tc)
Power dissipation69W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs99mOhm @ 5.3A, 10V
Gate charge (Qg) (Max) @ vgs62 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2587 pF @ 100 V