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Taiwan Semiconductor Corporation TSM5055DCR RLG

Taiwan Semiconductor Corporation TSM5055DCR RLG

MPNTSM5055DCR RLG
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MOSFET 2N-CH 30V 107A 8DFN

$1.33Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TSM5055DCR RLG specifications
ParameterValue
MountingSurface Mount
Drain to source voltage30V
Current - continuous drain (Id) @ 25°C10A (Ta), 38A (Tc), 20A (Ta), 107A (Tc)
Power - max2.2W (Ta), 30W (Tc), 2.4W (Ta), 69W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual) Asymmetrical
Case8-PowerTDFN
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs11.7mOhm @ 10A, 10V, 3.6mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs9.3nC @ 10V, 49nC @ 10V
Input capacitance (Ciss) (Max) @ vds555pF @ 15V, 2550pF @ 15V