Taiwan Semiconductor Corporation TSM4ND65CI
MPNTSM4ND65CI
Active
MOSFET N-CH 650V 4A ITO220
$2.68Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack, Isolated Tab
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 4A (Tc) |
| Power dissipation | 41.6W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack, Isolated Tab |
| Vgs(th) (Max) @ id | 3.8V @ 250µA |
| Rds on (Max) @ id, vgs | 2.6Ohm @ 1.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 16.8 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 596 pF @ 50 V |