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Taiwan Semiconductor Corporation TSM300NB06DCR RLG

Taiwan Semiconductor Corporation TSM300NB06DCR RLG

MPNTSM300NB06DCR RLG
Active

DUAL N-CHANNEL POWER MOSFET 60V,

$2.24Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TSM300NB06DCR RLG specifications
ParameterValue
FET type2 N-Channel (Dual)
MountingSurface Mount
Drain to source voltage60V
Current - continuous drain (Id) @ 25°C6A (Ta), 25A (Tc)
Power - max2W (Ta), 40W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
FET featureStandard
Case8-PowerTDFN
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs30mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs17nC @ 10V
Input capacitance (Ciss) (Max) @ vds1079pF @ 30V