Taiwan Semiconductor Corporation TSM250N02DCQ RFG
MPNTSM250N02DCQ RFG
Active
MOSFET 2N-CH 20V 5.8A 6TDFN
$0.55Ref. price · indicative, final on quote
Packaging6-VDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Drain to source voltage | 20V |
| Current - continuous drain (Id) @ 25°C | 5.8A (Tc) |
| Power - max | 620mW (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| FET feature | Standard |
| Configuration | 2 N-Channel (Dual) |
| Case | 6-VDFN Exposed Pad |
| Vgs(th) (Max) @ id | 800mV @ 250µA |
| Rds on (Max) @ id, vgs | 25mOhm @ 4A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 11nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 775pF @ 10V |