Taiwan Semiconductor Corporation TSM200N03DPQ33 RGG
MPNTSM200N03DPQ33 RGG
Active
MOSFET 2N-CH 30V 20A 8DFN
$0.64Ref. price · indicative, final on quote
Packaging8-PowerWDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Drain to source voltage | 30V |
| Current - continuous drain (Id) @ 25°C | 20A (Tc) |
| Power - max | 20W |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| Case | 8-PowerWDFN |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 20mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 4nC @ 4.5V |
| Input capacitance (Ciss) (Max) @ vds | 345pF @ 25V |