Taiwan Semiconductor Corporation TSM1NB60CW RPG
MPNTSM1NB60CW RPG
Active
MOSFET N-CHANNEL 600V 1A SOT223
$0.81Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 1A (Tc) |
| Power dissipation | 39W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 4.5V @ 250µA |
| Rds on (Max) @ id, vgs | 10Ohm @ 500mA, 10V |
| Gate charge (Qg) (Max) @ vgs | 6.1 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 138 pF @ 25 V |